Improved High Speed/Low Complexity Memristor-based Content Addressable Memory (MCAM) Cell

This paper provides new approach for nonvolatile Memristor-based Content Addressable Memory MCAM cell using memristor with CMOS processing technology in order to get high speed read/write operations within high packing density and low power dissipation. The proposed cell uses only two memristors as a memory cell and CMOS controlling circuitry which uses latching to decrease time required for writing. Moreover, less complexity has been achieved by using the same lines for read and write signals. On the other hand, proposed cell use latching to decrease write time and get nondestructive read operation. As a consequence, the proposed cell provides static power dissipation prevention and no opportunity for losing data.